It offers stable, quick switching performance and is suitable for use in AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency, tiny servo motor control circuits, power MOSFET gate drivers, and other switching applications. The BS170N transistor has a drain to source voltage of 60V and a constant drain current of 500mA. It features a 2.5-ohm on-state resistance and can tolerate peak currents of up to 1200mA. The BS170N is a small signal N-channel Enhancement Mode MOSFET. It is made using high cell DMOS technology to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. 

Specifications :

Package Include :

1 x BS170 N-Channel MOSFET TO-92 Package