SKU: AR-688-2S
- Material of Transistor: Si
- Maximum Collector Power Dissipation (Pc): 80 W
- Max. Operating Junction Temperature (Tj): 150 °C
- Material of Transistor: Si
- Maximum Collector Current |Ic max|: 8 A
₹57.82
(Including GST)
B688 Transistor is a High Power PNP Transistor, It is a Through-hole(THD) active component that consists of three terminals Base, Collector, and Emitter. It is a Triple diffused PNP transistor.
Specifiaction :-
| Model | 2SB688 |
| Brand | Korea |
| Collector-Base Voltage (VCBO) | -120V |
| Collector-Emitter Voltage (VCEO) | -120V |
| Emitter-Base voltage (VEBO) | -5V |
| Collector Current (IC) | -10A |
| Base Current (IB) | -1A |
| Collector Power Dissipation | 80W |
| Junction Temperature | 150* C |
| Storage Temperature Range | 55-150* C |
PACKING INCLUDES :-
1 X 2SB688 High Power PNP Transistor
