4N36 optocoupler consists of gallium arsenide infrared LED and a silicon NPN photo transistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

Specifications :

Package Include :

1 x 4N36 Optocoupler Phototransistor IC DIP-6 Package