The 4N80 is a three-terminal silicon device with a current conduction capability of 4A, a fast switching speed, a low on-state resistance, an 800V breakdown voltage rating, and a maximum operating temperature of -40°C. 5 volts is the threshold voltage. They are intended to be used in applications. Switched-mode power supplies, DC-to-DC converters, PWM motor controls, bridge circuits, and general-purpose switching applications are examples of such devices. These high-voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Specifications :

Package Include :

1 x 4N80K5 4A 800V N-Channel Power MOSFET