SKU: AR-GT-321
- Product - Transistor
- Model No - GT60N321
- Voltage - 1000V
- Current - 60A
₹383.50
(Including GST)
TOSHIBA GT60N321 is a Silicon N-Channel Insulated Gate Bipolar Transistor with Low saturation voltage VCE (sat) is 2.3 V (Typ.) (IC = 60 A). It is a through-hole(THD) active component with three terminals: gate, collector, and emitter. It is a fourth-generation IGBT unit and It is often used in high-power switching applications.
Specifications :
| Product | Transistor |
| Model No. | GT60N321 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C TO 150°C |
| Voltage | 1000V |
| Current | 60A |
Package Include :
1 x TOSHIBA GT60N321 1000V/60A N-Channel IGBT
